PART |
Description |
Maker |
M366S1623ET0 |
16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM的内存在8Mx8BanksK的刷新,3.3社民党基于同步DRAM
|
Samsung Semiconductor Co., Ltd.
|
HYMD116645BL8-K HYMD116645BL8-L HYMD116645BL8-M HY |
Unbuffered DDR SDRAM DIMM SDRAM|DDR|16MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX64 |的CMOS |内存| 184PIN |塑料 16Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor http://
|
M366S1723CTS |
16M x 64 SDRAM DIMM based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
M366S1623ET0 |
16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung semiconductor Samsung Electronic
|
HYMD2166466 HYMD216646L6 HYMD2166466-H |
16Mx64|2.5V|K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
M368L1713BT1 |
16M x 64 DDR SDRAM 184pin DIMM based on 16Mx8 Serial Presence Detect
|
Samsung Electronic
|
DSM390S2858CT1 M390S2858CT1 M390S2858CT1-C7A M390S |
SDRAM DIMM SDRAM的内 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYMD116645BL8J HYMD116645B8J HYMD116645B8J-J HYMD1 |
16Mx64|2.5V|J|x8|DDR SDRAM - Unbuffered DIMM 128MB Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
HYMD216646AL6-K HYMD216646AL6-H HYMD216646A6-H HYM |
Unbuffered DDR SDRAM DIMM 16Mx64|2.5V|M/K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
M464S1654CTS |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|